5

In depth study of the compensation in annealed heavily carbon doped GaAs

Year:
2006
Language:
english
File:
PDF, 262 KB
english, 2006
10

Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55μm

Year:
2015
Language:
english
File:
PDF, 475 KB
english, 2015
12

As

Year:
1988
Language:
english
File:
PDF, 459 KB
english, 1988
23

Very High Silicon Concentration by MOVPE in GaAs

Year:
1998
Language:
english
File:
PDF, 211 KB
english, 1998
25

Growth of GaN Films on Porous Silicon by MOVPE

Year:
2000
Language:
english
File:
PDF, 90 KB
english, 2000
27

Annealing Effect on GaN Buffer Layer Surface

Year:
2001
Language:
english
File:
PDF, 154 KB
english, 2001
29

In situ etching of GaAs using AsCl3 in MOVPE. II

Year:
1982
Language:
english
File:
PDF, 788 KB
english, 1982
30

In situ etching of GaAs using AsCl3 in MOVPE. I

Year:
1982
Language:
english
File:
PDF, 880 KB
english, 1982
40

Diffusion of vanadium in GaAs

Year:
2004
Language:
english
File:
PDF, 190 KB
english, 2004
41

Growth of vanadium-doped GaN by MOVPE

Year:
2005
Language:
english
File:
PDF, 324 KB
english, 2005
42

LP MOVPE growth and characterization of high Al content AlxGa1−xN epilayers

Year:
2005
Language:
english
File:
PDF, 227 KB
english, 2005
43

AP-MOVPE of thin GaAs1−xBix alloys

Year:
2006
Language:
english
File:
PDF, 606 KB
english, 2006
46

Magnesium diffusion profile in GaN grown by MOVPE

Year:
2008
Language:
english
File:
PDF, 251 KB
english, 2008
50

Photoluminescence of V-doped GaN thin films grown by MOVPE technique

Year:
2006
Language:
english
File:
PDF, 147 KB
english, 2006